Structural, electrical and magnetic properties of epitaxial La 0.7 Sr 0.3 CoO 3 thin films grown on SrTiO 3 and LaAlO 3 substrates

La 0.7 Sr 0.3 CoO 3 (LSCO) thin films have been epitaxially grown on SrTiO 3 (STO) and LaAlO 3 (LAO) substrates by metal organic deposition. The effects of the strain - induced by clamping - on the structural and physical properties of the films were studied. For that, we have performed resistivity...

Descripción completa

Detalles Bibliográficos
Autor principal: Othmen, Z.
Otros Autores: Schulman, A., Daoudi, K., Boudard, Michel, Acha, C., Roussel, H., Oueslati, M., Tsuchiya, T.
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: Elsevier B.V. 2014
Acceso en línea:Registro en Scopus
DOI
Handle
Registro en la Biblioteca Digital
Aporte de:Registro referencial: Solicitar el recurso aquí
LEADER 08050caa a22009857a 4500
001 PAPER-14188
003 AR-BaUEN
005 20241028090641.0
008 190411s2014 xx ||||fo|||| 00| 0 eng|d
024 7 |2 scopus  |a 2-s2.0-84901239952 
030 |a ASUSE 
040 |a Scopus  |b spa  |c AR-BaUEN  |d AR-BaUEN 
100 1 |a Othmen, Z. 
245 1 0 |a Structural, electrical and magnetic properties of epitaxial La 0.7 Sr 0.3 CoO 3 thin films grown on SrTiO 3 and LaAlO 3 substrates 
260 |b Elsevier B.V.  |c 2014 
270 1 0 |m Schulman, A.; Departamento de Física, FCEyN, IFIBA, Pabellón 1, 1428 Buenos Aires, Argentina; email: schulman@df.uba.ar 
504 |a Mizusaki, J., Tabuchi, J., Matsuura, T., Yamauchi, S., Fueki, K., (1989) J. Electrochem. Soc., 136, p. 2082 
504 |a Ohno, Y., Nagata, S., Sato, H., (1983) Solid State Ion., 9, p. 1001 
504 |a Maignan, A., Hebert, S., Pi, L., Pelloquin, D., Martin, C., Michel, C., Hervieu, M., Raveau, B., (2002) Crystal Eng., 5, p. 365 
504 |a Aarbogh, H.M., Wu, J., Wang, L., Zheng, H., Mitchell, J.F., Leighton, C., (2006) Phys. Rev. B, 74, p. 134408 
504 |a Torija, M.A., Sharma, M., Fitzsimmons, M.R., Varela, M., Leighton, C., (2008) J. Appl. Phys., 104, p. 023901 
504 |a Rata, A.D., Herklotz, A., Nenkov, K., Schultz, L., Dorr, K., (2008) Phys. Rev. Lett., 100, p. 076401 
504 |a Malavasi, L., Quartarone, E., Sanna, C., Lampis, N., Lehmann, A.G., Tealdi, C., Mozzati, M.C., Flor, G., (2006) Chem. Mater., 18, p. 5230 
504 |a Fuchs, D., Moran, O., Adelmann, P., Schneider, R., (2004) Physica B, 349, p. 337 
504 |a Fuchs, D., Schwarz, T., Moran, O., Schweiss, P., Schneider, R., (2005) Phys. Rev. B, 71, p. 092406 
504 |a Sun, J.R., Yeung, H.W., Li, H., Zhao, K., Chan, H.N., Wong, H.K., (2001) J. Appl. Phys., 90, p. 2831 
504 |a Daoudi, K., Tsuchiya, T., Nakajima, T., Fouzri, A., Oueslati, M., (2010) J. Alloys Compd., 506, p. 483 
504 |a Caciuffo, R., Rinaldi, D., Barucca, G., Mira, J., Rivas, J., Senaris-Rodriguez, M.A., Radaelli, P.G., Goodenough, J.B., (1999) Phys. Rev. B, 59, p. 1068 
504 |a Abrashev, M.V., Litvinchuk, A.P., Iliev, M.N., Meng, R.L., Popov, V.N., Ivanov, V.G., Chakalov, R.A., Thomsen, C., (1999) Phys. Rev. B, 59, p. 4146 
504 |a Suda, J., Kamishima, O., Kawamura, J., Hattori, T., Sato, T., (2009) J. Phys: Conf. Ser., 150, p. 052249 
504 |a Ishikawa, A., Nohara, J., Sugai, S., (2004) Phys. Rev. Lett., 93, p. 136401 
504 |a Orlovskaya, N., Stenmetz, D., Yarmolenko, S., Pai, D., Sankar, J., Goodenough, J., (2005) Phys. Rev. B, 72, p. 014122 
504 |a Xiong, Y.M., Chen, T., Wang, G.Y., Chen, X.H., Chen, X., Chen, C.L., (2004) Phys. Rev. B, 70, p. 094407 
504 |a Mott, N.F., (1990) Metal-Insulator Transitions, , 2nd ed. Taylor and Francis London 
504 |a Imada, M., Fujimori, A., Tokura, Y., (1998) Rev. Mod. Phys., 70, p. 1039 
504 |a Kriener, M., Zobel, C., Reichl, A., Baier, J., Cwik, M., Berggold, K., Kierspel, H., Lorenz, T., (2004) Phys. Rev. B, 69, p. 094417 
504 |a Itoh, M., Natori, I., Kubota, S., Motoya, K., (1994) J. Phys. Soc. Jpn., 63, p. 1486 
504 |a Kuhns, P.L., Hoch, M.J.R., Moulton, W.G., Reyes, A.P., Wu, J., Leighton, C., (2003) Phys. Rev. Lett., 91, p. 127202 
506 |2 openaire  |e Política editorial 
520 3 |a La 0.7 Sr 0.3 CoO 3 (LSCO) thin films have been epitaxially grown on SrTiO 3 (STO) and LaAlO 3 (LAO) substrates by metal organic deposition. The effects of the strain - induced by clamping - on the structural and physical properties of the films were studied. For that, we have performed resistivity and magnetization studies as a function of temperature and magnetic field as well as X-ray diffraction and Raman spectroscopy measurements. Our X-ray results are similar for both substrates showing that the 20 nm films are fully strained while thicker films have two components corresponding to a fully strained and a relaxed component. Relaxation induced by increasing film thickness (up to 100 nm) results in a systematic evolution of the out of plane crystallographic cell parameter toward the bulk LSCO values. Raman spectra of the thinner films exhibit specific modes which are not present in the bulk LSCO spectra. These modes disappear for thicker films which are totally relaxed. All the samples show similar magnetic behavior independently of the thickness and the substrate with a Curie temperature (T C ) around 210 K. Relative changes in resistivity due to the film thickness are larger than 3 orders of magnitude with a relatively small influence of the type of strain induced by the substrate (compressive or tensile). Moreover whereas the relaxed film (100 nm thick) shows similar transport properties as the bulk sample, the fully strained film (20 nm thick) shows a 3D variable range hopping conduction with a higher degree of localization which is a direct result of the strain state. © 2014 Elsevier B.V. All rights reserved.  |l eng 
536 |a Detalles de la financiación: Universidad de Buenos Aires 
536 |a Detalles de la financiación: European Commission 
536 |a Detalles de la financiación: Consejo Nacional de Investigaciones Científicas y Técnicas 
536 |a Detalles de la financiación: AS acknowledges scholarships from the European Commission (Arcoiris Erasmus Mundus), the University of Buenos Aires and from CONICET (Argentina). We are grateful with O. Chaix-Pluchery (Raman spectroscopy) and with F. Gay (resistivity measurements) for their experimental assistance. 
593 |a Unité Nanomatériaux et Photonique, Faculté des Sciences de Tunis, 2092 El Manar Tunis, Tunisia 
593 |a Laboratoire des Matériaux et du Génie Physique, UMR 5628 CNRS-UDG-Grenoble INP, Minatec, 3, Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1, France 
593 |a Departamento de Física, FCEyN, IFIBA, Pabellón 1, 1428 Buenos Aires, Argentina 
593 |a Physics Department, United Arab Emirates University, P.O. Box 17551, Al-Ain, United Arab Emirates 
593 |a National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8565, Japan 
690 1 0 |a COBALTITE THIN FILMS 
690 1 0 |a CONDUCTION MECHANISM 
690 1 0 |a STRAIN ENGINEERING 
690 1 0 |a ALUMINUM COMPOUNDS 
690 1 0 |a EPITAXIAL GROWTH 
690 1 0 |a FILM THICKNESS 
690 1 0 |a LANTHANUM COMPOUNDS 
690 1 0 |a MAGNETISM 
690 1 0 |a ORGANOMETALLICS 
690 1 0 |a STRONTIUM TITANATES 
690 1 0 |a SUBSTRATES 
690 1 0 |a TITANIUM COMPOUNDS 
690 1 0 |a X RAY DIFFRACTION 
690 1 0 |a CONDUCTION MECHANISM 
690 1 0 |a DEGREE OF LOCALIZATION 
690 1 0 |a ELECTRICAL AND MAGNETIC PROPERTY 
690 1 0 |a METAL ORGANIC DEPOSITION 
690 1 0 |a RAMAN SPECTROSCOPY MEASUREMENTS 
690 1 0 |a STRAIN ENGINEERING 
690 1 0 |a STRUCTURAL AND PHYSICAL PROPERTIES 
690 1 0 |a VARIABLE-RANGE HOPPING CONDUCTION 
690 1 0 |a THIN FILMS 
700 1 |a Schulman, A. 
700 1 |a Daoudi, K. 
700 1 |a Boudard, Michel 
700 1 |a Acha, C. 
700 1 |a Roussel, H. 
700 1 |a Oueslati, M. 
700 1 |a Tsuchiya, T. 
773 0 |d Elsevier B.V., 2014  |g v. 306  |h pp. 60-65  |p Appl Surf Sci  |x 01694332  |w (AR-BaUEN)CENRE-76  |t Applied Surface Science 
856 4 1 |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-84901239952&doi=10.1016%2fj.apsusc.2014.03.034&partnerID=40&md5=7ee385848da36bd74480d808cae37511  |x registro  |y Registro en Scopus 
856 4 0 |u https://doi.org/10.1016/j.apsusc.2014.03.034  |x doi  |y DOI 
856 4 0 |u https://hdl.handle.net/20.500.12110/paper_01694332_v306_n_p60_Othmen  |x handle  |y Handle 
856 4 0 |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_01694332_v306_n_p60_Othmen  |x registro  |y Registro en la Biblioteca Digital 
961 |a paper_01694332_v306_n_p60_Othmen  |b paper  |c PE 
962 |a info:eu-repo/semantics/article  |a info:ar-repo/semantics/artículo  |b info:eu-repo/semantics/publishedVersion