Ring oscillators response to irradiation and application to dosimetry

The response of ring oscillators to ionizing irradiation is investigated, regarding their possible use as dosimeters. Different structures were designed, fabricated and tested. Results show that dose resolution can be improved by one order of magnitude compared to conventional MOS dosimeters built i...

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Autor principal: Carbonetto, S.
Otros Autores: Lipovetzky, J., Inza, M.G, Redin, E., Faigón, Adrián Néstor
Formato: Acta de conferencia Capítulo de libro
Lenguaje:Inglés
Publicado: 2009
Acceso en línea:Registro en Scopus
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Registro en la Biblioteca Digital
Aporte de:Registro referencial: Solicitar el recurso aquí
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100 1 |a Carbonetto, S. 
245 1 0 |a Ring oscillators response to irradiation and application to dosimetry 
260 |c 2009 
270 1 0 |m Carbonetto, S.; Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina 
504 |a Oldham, T.R., Ionizing Radiation Effects in MOS Oxides (1999) Advances in Solid State Electronics and Technology Series, , Singapore: World Scientific 
504 |a Holmes-Siedle, A., Adams, L., RADFETs: A Review of the Use of Metal-Oxide-Silicon Devices as Integrating Dosimeters Radiation Physics and Chemistry, 28 (2), pp. 235-244 
504 |a Oldham, T.R., McLean, F.B., Total Ionizing Effects in MOS oxides and Devices (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 483-499 
504 |a Hughes, H.L., Benedetto, J.M., Radiation Effects and hardening of MOS Technology: Devices and Circuits (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 500-520 
504 |a Rabaey, J.M., Chandrakasan, A., Nikolic, B., (2003) Digital Integrated Circuits, , Second edition, Prentice-Hall ISBN 1-13-090996- 3 
504 |a Poch, W.J., Holmes-Siedle, A.G., Long-Term Effects Of Radiation On Complementary Mos Logic Networks (1970) IEEE Trans. Nucl. Sci, NS-17 (6), pp. 33-40 
504 |a Lee, D.-S., Chan, C.-Y., Oxide charge accumulation in metal oxide semiconductor devices during irradiation (1991) J. Appl. Phys, 69 (10), pp. 7134-7141. , May 
504 |a Shaneyfelt, M.R., Swank, J.R., Fleetwood, D.M., Field Dependence of interface trap buildup in polysilicon and metal gate MOS devices (1990) IEEE Trans. Nucl. Sci, 37 (6), pp. 1632-1639. , Dec 
504 |a Vincent R. von Kaenel A High-Speed, low power clock generator for a microprocessor application, IEEE Journal of Solid-Sate Circuits, 33 No. 11, pp. 1634-1639, Nov. 1998; Young, I.A., Greason, J.K., Wong, K.L., A PLL clock generator with 5to 110 MHz of clock range microprocessors (1992) IEEE Journal of Solid-Sate Circuits, 27 (11), pp. 1599-1607. , November 
504 |a Hajimiri, A., Limotyrakis, S., Lee, T.H., Jitter and Phase Noise in Ring Oscillators (1999) IEEE Journal of Solid-Sate Circuits, 34 (6), p. 790. , JuneA4 - IEEE; CAS; UCC; INTI; INVAP 
506 |2 openaire  |e Política editorial 
520 3 |a The response of ring oscillators to ionizing irradiation is investigated, regarding their possible use as dosimeters. Different structures were designed, fabricated and tested. Results show that dose resolution can be improved by one order of magnitude compared to conventional MOS dosimeters built in the same process.  |l eng 
593 |a Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina 
690 1 0 |a DOSIMETRY 
690 1 0 |a IONIZING RADIATION 
690 1 0 |a MOS DEVICES 
690 1 0 |a RING OSCILLATOR 
690 1 0 |a DIFFERENT STRUCTURE 
690 1 0 |a IONIZING IRRADIATION 
690 1 0 |a MOS DOSIMETER 
690 1 0 |a ORDER OF MAGNITUDE 
690 1 0 |a RING OSCILLATOR 
690 1 0 |a DOSIMETERS 
690 1 0 |a DOSIMETRY 
690 1 0 |a IONIZING RADIATION 
690 1 0 |a IRRADIATION 
690 1 0 |a MOS DEVICES 
690 1 0 |a NANOELECTRONICS 
690 1 0 |a OPTICAL DEVICES 
690 1 0 |a RADIATION SHIELDING 
690 1 0 |a RADIOACTIVITY 
690 1 0 |a OSCILLATORS (ELECTRONIC) 
700 1 |a Lipovetzky, J. 
700 1 |a Inza, M.G. 
700 1 |a Redin, E. 
700 1 |a Faigón, Adrián Néstor 
711 2 |c Bariloche  |d 1 October 2009 through 2 October 2009  |g Código de la conferencia: 78598 
773 0 |d 2009  |h pp. 1-4  |p Proc. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA  |n Proceedings of the Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009  |z 9781424448357  |t Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009 
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