A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3
Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superco...
| Autor principal: | Rozenberg, Marcelo Javier |
|---|---|
| Publicado: |
2013
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_20452322_v3_n_p_Lee http://hdl.handle.net/20.500.12110/paper_20452322_v3_n_p_Lee |
| Aporte de: |
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