Relaxation of a Spiking Mott Artificial Neuron

We consider the phenomenon of electric Mott transition (EMT), which is an electrically induced insulator-to-metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation, the final state may show a short-lived or a long-lived resistance change. We extend...

Descripción completa

Detalles Bibliográficos
Publicado: 2018
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_23317019_v10_n5_p_Tesler
http://hdl.handle.net/20.500.12110/paper_23317019_v10_n5_p_Tesler
Aporte de:
Descripción
Sumario:We consider the phenomenon of electric Mott transition (EMT), which is an electrically induced insulator-to-metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation, the final state may show a short-lived or a long-lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing, the induced metastable phase may become further stabilized by the electroelastic effect. We present a systematic study of the model by numerical simulations and compare the results to experiments in Mott insulators of the AM4Q8 family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott neuron [P. Stoliar et al., Adv. Funct. Mat. 27, 1604740 (2017)] to provide a better insight into the physical mechanism of its relaxation. This is a key feature for future implementations of neuromorphic circuits. © 2018 American Physical Society.