Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular,...

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Detalles Bibliográficos
Autores principales: Camjayi, A., Chitra, R., Rozenberg, M.J.
Formato: JOUR
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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