Two-dimensional electron gas with universal subbands at the surface of SrTiO 3

As silicon is the basis of conventional electronics, so strontium titanate (SrTiO3) is the foundation of the emerging field of oxide electronics1,2. SrTiO3 is the preferred template for the creation of exotic, two-dimensional (2D) phases of electron matter at oxide interfaces3-5 that have metalg-ins...

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Autor principal: Santander-Syro, A.F
Otros Autores: Copie, O., Kondo, T., Fortuna, F., Pailhés, S., Weht, Rubén Oscar, Qiu, X.G, Bertran, F., Nicolaou, A., Taleb-Ibrahimi, A., Le F́vre, P., Herranz, G., Bibes, M., Reyren, N., Apertet, Y., Lecoeur, P., Barthélémy, A., Rozenberg, M.J
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: Nature Publishing Group 2011
Acceso en línea:Registro en Scopus
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Registro en la Biblioteca Digital
Aporte de:Registro referencial: Solicitar el recurso aquí
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024 7 |2 scopus  |a 2-s2.0-78651386054 
024 7 |2 cas  |a strontium, 7440-24-6; titanium dioxide, 1317-70-0, 1317-80-2, 13463-67-7, 51745-87-0 
030 |a NATUA 
040 |a Scopus  |b spa  |c AR-BaUEN  |d AR-BaUEN 
100 1 |a Santander-Syro, A.F. 
245 1 0 |a Two-dimensional electron gas with universal subbands at the surface of SrTiO 3 
260 |b Nature Publishing Group  |c 2011 
270 1 0 |m Santander-Syro, A. F.; CSNSM, CNRS/IN2P3, Université Paris-Sud, Bâtiments 104 et 108, 91405 Orsay cedex, France; email: andres.santander@csnsm.in2p3.fr 
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506 |2 openaire  |e Política editorial 
520 3 |a As silicon is the basis of conventional electronics, so strontium titanate (SrTiO3) is the foundation of the emerging field of oxide electronics1,2. SrTiO3 is the preferred template for the creation of exotic, two-dimensional (2D) phases of electron matter at oxide interfaces3-5 that have metalg-insulator transitions6,7, superconductivity8,9 or large negative magnetoresistance 10. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs), which is crucial to understanding their remarkable properties11,12, remains elusive. Here we show, using angle-resolved photoemission spectroscopy, that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3 (including the non-doped insulating material) independently of bulk carrier densities over more than seven decades. This 2DEG is confined within a region of about five unit cells and has a sheet carrier density of ∼0.33 electrons per square lattice parameter. The electronic structure consists of multiple subbands of heavy and light electrons. The similarity of this 2DEG to those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices and a novel means of generating 2DEGs at the surfaces of transition-metal oxides. © 2011 Macmillan Publishers Limited. All rights reserved.  |l eng 
593 |a CSNSM, CNRS/IN2P3, Université Paris-Sud, Bâtiments 104 et 108, 91405 Orsay cedex, France 
593 |a Laboratoire Physique et Etude des Matériaux, UMR 8213 ESPCI-CNRS-UPMC, 10 rue Vauquelin, 75231 Paris cedex 5, France 
593 |a Unité Mixte de Physique CNRS/Thales, Campus de l'Ecole Polytechnique, 1 Avenue A. Fresnel, 91767 Palaiseau, France 
593 |a Université Paris-Sud, 91405 Orsay, France 
593 |a Universität Würzburg, Experimentelle Physik VII, 97074 Würzburg, Germany 
593 |a Ames Laboratory, Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, United States 
593 |a Laboratoire Léon Brillouin, CEA-CNRS, CEA-Saclay, 91191 Gif-sur-Yvette, France 
593 |a Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Avenida General Paz y Constituyentes, 1650 San Martín, Argentina 
593 |a Instituto Sábato, Universidad Nacional de San Martín - CNEA, 1650 San Martín, Argentina 
593 |a Institute of Physics, National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Zhongguancun nansanjie 8, Beijing 100190, China 
593 |a Synchrotron SOLEIL, CNRS-CEA, l'Orme des Merisiers, Saint-Aubin-BP48, 91192 Gif-sur-Yvette, France 
593 |a Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, Catalonia, Spain 
593 |a Institut d'Electronique Fondamentale, Université Paris-Sud, Bâtiment 220, 91405 Orsay, France 
593 |a Laboratoire de Physique des Solides, Université Paris-Sud, Bâtiment 510, 91405 Orsay, France 
593 |a Departamento de Física, FCEN-UBA, Ciudad Universitaria, Pabellón 1, Buenos Aires (1428), Argentina 
690 1 0 |a METAL OXIDE 
690 1 0 |a STRONTIUM 
690 1 0 |a TITANIUM DIOXIDE 
690 1 0 |a ELECTRON 
690 1 0 |a GAS 
690 1 0 |a INSULATION 
690 1 0 |a NUMERICAL MODEL 
690 1 0 |a OXIDE 
690 1 0 |a SILICON 
690 1 0 |a SPECTROSCOPY 
690 1 0 |a TWO-DIMENSIONAL MODELING 
690 1 0 |a ARTICLE 
690 1 0 |a CONDUCTANCE 
690 1 0 |a ELECTRON 
690 1 0 |a ELECTRONICS 
690 1 0 |a ENERGY 
690 1 0 |a GAS 
690 1 0 |a PRIORITY JOURNAL 
690 1 0 |a SPECTROSCOPY 
690 1 0 |a SUPERCONDUCTOR 
700 1 |a Copie, O. 
700 1 |a Kondo, T. 
700 1 |a Fortuna, F. 
700 1 |a Pailhés, S. 
700 1 |a Weht, Rubén Oscar 
700 1 |a Qiu, X.G. 
700 1 |a Bertran, F. 
700 1 |a Nicolaou, A. 
700 1 |a Taleb-Ibrahimi, A. 
700 1 |a Le F́vre, P. 
700 1 |a Herranz, G. 
700 1 |a Bibes, M. 
700 1 |a Reyren, N. 
700 1 |a Apertet, Y. 
700 1 |a Lecoeur, P. 
700 1 |a Barthélémy, A. 
700 1 |a Rozenberg, M.J. 
773 0 |d Nature Publishing Group, 2011  |g v. 469  |h pp. 189-194  |k n. 7329  |p Nature  |x 00280836  |w (AR-BaUEN)CENRE-48  |t Nature 
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