Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation

The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of t...

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Autor principal: Lipovetzky, J.
Otros Autores: Redin, E., Inza, M.G, Carbonetto, S., Faigón, Adrián Néstor
Formato: Acta de conferencia Capítulo de libro
Lenguaje:Inglés
Publicado: 2009
Acceso en línea:Registro en Scopus
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100 1 |a Lipovetzky, J. 
245 1 0 |a Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation 
260 |c 2009 
270 1 0 |m Lipovetzky, J.; Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina; email: jlipove@fi.uba.ar 
504 |a Holmes-Siedle, A., Adams, L., RADFETs: A Review of the Use of Metal-Oxide-Silicon Devices as Integrating Dosimeters (1994) Rad. Phys. and Chem, 28 (2), pp. 235-244 
504 |a N. Garry Tarr, Member, IEEE, Ken Shortt, Yanbin Wang, and Ian Thomson, Member, IEEE A Sensitive, Temperature-Compensated, Zero-Bias Floating Gate MOSFET Dosimeter, IEEE Trans. Nucl. SciVol. 51, No. 3, pp. 1277-1282, 2004; Haran, A., Jaksic, A., Refaeli, N., Eliyahu, A., David, D., Barak, J., Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs (1994) IEEE Trans. Nucl. Sci, 51 (51), pp. 2917-2921 
504 |a Soubra, M., Cygler, J., Evaluation of a dual bias dual metal oxidesilicon semiconductor field effect transistor detector as radiation dosimeter (1994) Med. Phys, 21 (4), pp. 567-572 
504 |a Schwank, J.R., Sexton, F.W., Fleetwood, D.M., Jones, R.V., Flores, R.S., Rodgers, M.S., Hughes, K.L., Temperature effects on the radiation response of MOS devices (1988) IEEE Trans. Nucl. Sci, 35 (6), pp. 1432-1437 
504 |a Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Effects of Irradiation Temperature on MOS Radiation Response (1997) Proc of RADECS, 97, pp. 43-49 
504 |a Yilmaza, E., Turan, R., Temperature cycling of MOS-based radiation sensors (2008) Sens. and Act. A, 141, pp. 1-5. , Is. 1, pp 
504 |a Lipovetzky, J., Inza, M.G., Carbonetto, S., Redin, E., Faigon, A., Temperature and interface traps compensation in MOS Bias Controlled Cycled Dosimeters (2008) Proc. of the third Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA 2008), pp. 23-28 
504 |a Faigón, A., Lipovetzky, J., Redin, E., Krusczenski, G., Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization (2008) IEEE Trans Nucl Sci, 55 (4), pp. 2141-2147. , Aug 
504 |a Oldham, T.R., Ionizing Radiation Effects in MOS Oxides (1999) Advances in Solid State Electronics and Technology Series, , Singapore: World Scientific 
504 |a Oldham, T.R., McLean, F.B., Total Ionizing Effects in MOS oxides and Devices (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 483-499 
504 |a Hughes, H.L., Benedetto, J.M., Radiation Effects and hardening of MOS Technology: Devices and Circuits (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 500-520 
504 |a Poch, W.J., Holmes-Siedle, A.G., Long-Term Effects Of Radiation On Complementary Mos Logic Networks (1970) IEEE Trans. Nucl. Sci, 17 (6), pp. 33-40 
504 |a Fleetwood, D.M., Winokur, P.S., Riewe, L.C., Predicting switched-bias response from steady-state irradiations MOS transistors (1990) IEEE Trans. Nucl. Sci, 37 (6), pp. 1806-1817 
504 |a Fleetwood, D.M., Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices (1990) Jour. Appl. Phys, 67 (ISS. 1), pp. 580-583 
504 |a A. Faigón, J. Lipovetzky, E. Redin, M. García Inza, M. Maestri, A. Cedola Experimental evidence and modeling of non-monotonic responses in MOS dosimeters., sent to Rad. Phys. and Chem., 2008; Sze, Physics of Semiconductor devices, 3rd edition, , Willey, ISBN: 978-0-471-14323-9 
504 |a Kelleher, A., McDonnell, N., O'Neill, B., Lane, W., Adams, L., Investigation into the re-use of PMOS dosimeters (1994) IEEE Trans. on Nucl. Sci, 41 (3), pp. 445-451 
504 |a Boesch, H.E., McGarrity, J.M., McLean, F.B., Temperature- and Field-Dependent Charge Relaxation in SiO2 Gate Insulators (1978) IEEE Trans. on Nucl. Sci, 25 (ISS. 3), pp. 1012-1016A4 - IEEE; CAS; UCC; INTI; INVAP 
506 |2 openaire  |e Política editorial 
520 3 |a The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature.  |l eng 
593 |a Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina 
690 1 0 |a BUILT-IN POTENTIAL 
690 1 0 |a GAMMA IRRADIATION 
690 1 0 |a GATE OXIDE THICKNESS 
690 1 0 |a GATE VOLTAGES 
690 1 0 |a METAL OXIDE SEMICONDUCTOR 
690 1 0 |a MOS DOSIMETER 
690 1 0 |a OXIDE CHARGE 
690 1 0 |a RADIATION-INDUCED 
690 1 0 |a SWITCHED BIAS 
690 1 0 |a TEMPERATURE EFFECTS 
690 1 0 |a THERMAL-ANNEALING 
690 1 0 |a DOSIMETERS 
690 1 0 |a DOSIMETRY 
690 1 0 |a METALLIC COMPOUNDS 
690 1 0 |a MOS DEVICES 
690 1 0 |a NANOELECTRONICS 
690 1 0 |a IRRADIATION 
700 1 |a Redin, E. 
700 1 |a Inza, M.G. 
700 1 |a Carbonetto, S. 
700 1 |a Faigón, Adrián Néstor 
711 2 |c Bariloche  |d 1 October 2009 through 2 October 2009  |g Código de la conferencia: 78598 
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