Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of t...
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| Otros Autores: | , , , |
| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
2009
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| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
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| LEADER | 06854caa a22007337a 4500 | ||
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| 001 | PAPER-23003 | ||
| 003 | AR-BaUEN | ||
| 005 | 20250311104640.0 | ||
| 008 | 190411s2009 xx ||||fo|||| 10| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-71949105698 | |
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Lipovetzky, J. | |
| 245 | 1 | 0 | |a Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| 260 | |c 2009 | ||
| 270 | 1 | 0 | |m Lipovetzky, J.; Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina; email: jlipove@fi.uba.ar |
| 504 | |a Holmes-Siedle, A., Adams, L., RADFETs: A Review of the Use of Metal-Oxide-Silicon Devices as Integrating Dosimeters (1994) Rad. Phys. and Chem, 28 (2), pp. 235-244 | ||
| 504 | |a N. Garry Tarr, Member, IEEE, Ken Shortt, Yanbin Wang, and Ian Thomson, Member, IEEE A Sensitive, Temperature-Compensated, Zero-Bias Floating Gate MOSFET Dosimeter, IEEE Trans. Nucl. SciVol. 51, No. 3, pp. 1277-1282, 2004; Haran, A., Jaksic, A., Refaeli, N., Eliyahu, A., David, D., Barak, J., Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs (1994) IEEE Trans. Nucl. Sci, 51 (51), pp. 2917-2921 | ||
| 504 | |a Soubra, M., Cygler, J., Evaluation of a dual bias dual metal oxidesilicon semiconductor field effect transistor detector as radiation dosimeter (1994) Med. Phys, 21 (4), pp. 567-572 | ||
| 504 | |a Schwank, J.R., Sexton, F.W., Fleetwood, D.M., Jones, R.V., Flores, R.S., Rodgers, M.S., Hughes, K.L., Temperature effects on the radiation response of MOS devices (1988) IEEE Trans. Nucl. Sci, 35 (6), pp. 1432-1437 | ||
| 504 | |a Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Effects of Irradiation Temperature on MOS Radiation Response (1997) Proc of RADECS, 97, pp. 43-49 | ||
| 504 | |a Yilmaza, E., Turan, R., Temperature cycling of MOS-based radiation sensors (2008) Sens. and Act. A, 141, pp. 1-5. , Is. 1, pp | ||
| 504 | |a Lipovetzky, J., Inza, M.G., Carbonetto, S., Redin, E., Faigon, A., Temperature and interface traps compensation in MOS Bias Controlled Cycled Dosimeters (2008) Proc. of the third Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA 2008), pp. 23-28 | ||
| 504 | |a Faigón, A., Lipovetzky, J., Redin, E., Krusczenski, G., Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization (2008) IEEE Trans Nucl Sci, 55 (4), pp. 2141-2147. , Aug | ||
| 504 | |a Oldham, T.R., Ionizing Radiation Effects in MOS Oxides (1999) Advances in Solid State Electronics and Technology Series, , Singapore: World Scientific | ||
| 504 | |a Oldham, T.R., McLean, F.B., Total Ionizing Effects in MOS oxides and Devices (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 483-499 | ||
| 504 | |a Hughes, H.L., Benedetto, J.M., Radiation Effects and hardening of MOS Technology: Devices and Circuits (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 500-520 | ||
| 504 | |a Poch, W.J., Holmes-Siedle, A.G., Long-Term Effects Of Radiation On Complementary Mos Logic Networks (1970) IEEE Trans. Nucl. Sci, 17 (6), pp. 33-40 | ||
| 504 | |a Fleetwood, D.M., Winokur, P.S., Riewe, L.C., Predicting switched-bias response from steady-state irradiations MOS transistors (1990) IEEE Trans. Nucl. Sci, 37 (6), pp. 1806-1817 | ||
| 504 | |a Fleetwood, D.M., Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices (1990) Jour. Appl. Phys, 67 (ISS. 1), pp. 580-583 | ||
| 504 | |a A. Faigón, J. Lipovetzky, E. Redin, M. García Inza, M. Maestri, A. Cedola Experimental evidence and modeling of non-monotonic responses in MOS dosimeters., sent to Rad. Phys. and Chem., 2008; Sze, Physics of Semiconductor devices, 3rd edition, , Willey, ISBN: 978-0-471-14323-9 | ||
| 504 | |a Kelleher, A., McDonnell, N., O'Neill, B., Lane, W., Adams, L., Investigation into the re-use of PMOS dosimeters (1994) IEEE Trans. on Nucl. Sci, 41 (3), pp. 445-451 | ||
| 504 | |a Boesch, H.E., McGarrity, J.M., McLean, F.B., Temperature- and Field-Dependent Charge Relaxation in SiO2 Gate Insulators (1978) IEEE Trans. on Nucl. Sci, 25 (ISS. 3), pp. 1012-1016A4 - IEEE; CAS; UCC; INTI; INVAP | ||
| 506 | |2 openaire |e Política editorial | ||
| 520 | 3 | |a The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature. |l eng | |
| 593 | |a Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina | ||
| 690 | 1 | 0 | |a BUILT-IN POTENTIAL |
| 690 | 1 | 0 | |a GAMMA IRRADIATION |
| 690 | 1 | 0 | |a GATE OXIDE THICKNESS |
| 690 | 1 | 0 | |a GATE VOLTAGES |
| 690 | 1 | 0 | |a METAL OXIDE SEMICONDUCTOR |
| 690 | 1 | 0 | |a MOS DOSIMETER |
| 690 | 1 | 0 | |a OXIDE CHARGE |
| 690 | 1 | 0 | |a RADIATION-INDUCED |
| 690 | 1 | 0 | |a SWITCHED BIAS |
| 690 | 1 | 0 | |a TEMPERATURE EFFECTS |
| 690 | 1 | 0 | |a THERMAL-ANNEALING |
| 690 | 1 | 0 | |a DOSIMETERS |
| 690 | 1 | 0 | |a DOSIMETRY |
| 690 | 1 | 0 | |a METALLIC COMPOUNDS |
| 690 | 1 | 0 | |a MOS DEVICES |
| 690 | 1 | 0 | |a NANOELECTRONICS |
| 690 | 1 | 0 | |a IRRADIATION |
| 700 | 1 | |a Redin, E. | |
| 700 | 1 | |a Inza, M.G. | |
| 700 | 1 | |a Carbonetto, S. | |
| 700 | 1 | |a Faigón, Adrián Néstor | |
| 711 | 2 | |c Bariloche |d 1 October 2009 through 2 October 2009 |g Código de la conferencia: 78598 | |
| 773 | 0 | |d 2009 |h pp. 41-45 |p Proc. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA |n Proceedings of the Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009 |z 9781424448357 |t Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009 | |
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| 856 | 4 | 0 | |u https://doi.org/10.1109/EAMTA.2009.5288902 |x doi |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky |x handle |y Handle |
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