Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of t...
| Autor principal: | Lipovetzky, J. |
|---|---|
| Otros Autores: | Redin, E., Inza, M.G, Carbonetto, S., Faigón, Adrián Néstor |
| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
2009
|
| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
Ejemplares similares
-
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
por: Lipovetzky, J., et al. -
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
Publicado: (2009) -
Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
por: Zazpe, R., et al.
Publicado: (2013) -
Mechanism for bipolar resistive switching in transition-metal oxides
por: Rozenberg, M.J
Publicado: (2010) -
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
Publicado: (2012)