“After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
The phenomena called “electron-capture after-effects” (ECAE) in the pioneering works from La Plata group in the eighties is produced by the electronic relaxation process that occur in the probe-atom ¹¹¹Cd subsequent to the electron-capture (EC) nuclear decay of its father nuclide ¹¹¹In. The ECAE is...
Guardado en:
| Autores principales: | Darriba, Germán Nicolás, Rentería, Mario, Vianden, R. |
|---|---|
| Formato: | Objeto de conferencia |
| Lenguaje: | Español |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | http://sedici.unlp.edu.ar/handle/10915/147270 |
| Aporte de: |
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