Cita APA (7a ed.)

Real, M., Shen, T., Jones, G. R., Elmquist, R. E., Soons, J. A., Davydov, A. V., . . . measurements, C. o. p. e. (2012). Graphene epitaxial growth on SiC(0001) for resistance standards. IEEE.

Cita Chicago Style (17a ed.)

Real, Mariano, Tian Shen, George R. Jones, Randolph E. Elmquist, Johannes A. Soons, Albert V. Davydov, US National Institute of Standards and Technology. NIST. Gaithersburg, AR INTI-Física y Metrología. Buenos Aires, y Conference on precision electromagnetic measurements. Graphene Epitaxial Growth on SiC(0001) for Resistance Standards. IEEE, 2012.

Cita MLA (8a ed.)

Real, Mariano, et al. Graphene Epitaxial Growth on SiC(0001) for Resistance Standards. IEEE, 2012.