Voltage profile and four-terminal resistance of an interacting quantum wire

We investigate the behavior of the four-terminal resistance R4pt in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case,...

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Publicado: 2008
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v77_n23_p_Arrachea
http://hdl.handle.net/20.500.12110/paper_10980121_v77_n23_p_Arrachea
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spelling paper:paper_10980121_v77_n23_p_Arrachea2023-06-08T16:07:39Z Voltage profile and four-terminal resistance of an interacting quantum wire We investigate the behavior of the four-terminal resistance R4pt in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case, interactions leave a signature in a power-law behavior of R4pt as a function of the voltage V and the temperature T. In the second case interactions tend to mask the effect of the asymmetries. In both scenarios the occurrence of negative values of R4pt is explained in simple terms. © 2008 The American Physical Society. 2008 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v77_n23_p_Arrachea http://hdl.handle.net/20.500.12110/paper_10980121_v77_n23_p_Arrachea
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We investigate the behavior of the four-terminal resistance R4pt in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case, interactions leave a signature in a power-law behavior of R4pt as a function of the voltage V and the temperature T. In the second case interactions tend to mask the effect of the asymmetries. In both scenarios the occurrence of negative values of R4pt is explained in simple terms. © 2008 The American Physical Society.
title Voltage profile and four-terminal resistance of an interacting quantum wire
spellingShingle Voltage profile and four-terminal resistance of an interacting quantum wire
title_short Voltage profile and four-terminal resistance of an interacting quantum wire
title_full Voltage profile and four-terminal resistance of an interacting quantum wire
title_fullStr Voltage profile and four-terminal resistance of an interacting quantum wire
title_full_unstemmed Voltage profile and four-terminal resistance of an interacting quantum wire
title_sort voltage profile and four-terminal resistance of an interacting quantum wire
publishDate 2008
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v77_n23_p_Arrachea
http://hdl.handle.net/20.500.12110/paper_10980121_v77_n23_p_Arrachea
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