A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3
Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superco...
Guardado en:
| Autores principales: | Lee, H.S., Choi, S.G., Park, H.-H., Rozenberg, M.J. |
|---|---|
| Formato: | Artículo publishedVersion |
| Lenguaje: | Inglés |
| Publicado: |
2013
|
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_20452322_v3_n_p_Lee |
| Aporte de: |
Ejemplares similares
-
A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3
por: Lee, H.S., et al. -
A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3
por: Lee, H.S., et al.
Publicado: (2013) -
A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3
por: Rozenberg, Marcelo Javier
Publicado: (2013) -
Magnetorresistencia colosal en sistemas del La0.6Sr0.4MnO3+[gamma] /
Publicado: (1998) -
Transporte eléctrico en películas delgadas de La(0.6)Sr(0.4)MnO(3) : magnetoresistencia y efecto Hall /
Publicado: (2001)