A measurement of the ionization efficiency of nuclear recoils in silicon

We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV. We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstruct...

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Autores principales: Izraelevitch, F., Amidei, D., Aprahamian, A., Arcos-Olalla, R., Cancelo, G., Casarella, C., Chavarria, A.E., Collon, P., Estrada, J., Moroni, G.F., Guardincerri, Y., Gutiérrez, G., Gyurjinyan, A., Kavner, A., Kilminster, B., Liao, J., Liu, Q., López, M., Molina, J., Privitera, P., Reyes, M.A., Scarpine, V., Siegl, K., Smith, M., Strauss, S., Tan, W., Tiffenberg, J., Villanueva, L.
Formato: JOUR
Materias:
Dark Matter detectors (WIMPs, axions, etc.)
Instrumentation and methods for time-of-flight (TOF) spectroscopy
Neutron detectors (cold, thermal, fast neutrons)
Solid state detectors
Ionization
Kinetic energy
Kinetics
Semiconductor detectors
Silicon
Dark matter detectors
Fast neutrons
Ionization efficiency
Scattering angles
Silicon drift-diodes
Theory predictions
Time of flight
Neutrons
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_17480221_v12_n6_p_Izraelevitch
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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