Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herei...

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Autores principales: Mai, V.H., Moradpour, A., Senzier, P.A., Pasquier, C., Wang, K., Rozenberg, M.J., Giapintzakis, J., Mihailescu, C.N., Orfanidou, C.M., Svoukis, E., Breza, A., Lioutas, C.B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P., Agnus, G., Salot, R., Albouy, P.A., Weil, R., Alamarguy, D., March, K., Jomard, F., Chrétien, P., Schneegans, O.
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_20452322_v5_n_p_Mai
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spelling todo:paper_20452322_v5_n_p_Mai2023-10-03T16:38:11Z Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery Mai, V.H. Moradpour, A. Senzier, P.A. Pasquier, C. Wang, K. Rozenberg, M.J. Giapintzakis, J. Mihailescu, C.N. Orfanidou, C.M. Svoukis, E. Breza, A. Lioutas, C.B. Franger, S. Revcolevschi, A. Maroutian, T. Lecoeur, P. Aubert, P. Agnus, G. Salot, R. Albouy, P.A. Weil, R. Alamarguy, D. March, K. Jomard, F. Chrétien, P. Schneegans, O. The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_20452322_v5_n_p_Mai
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.
format JOUR
author Mai, V.H.
Moradpour, A.
Senzier, P.A.
Pasquier, C.
Wang, K.
Rozenberg, M.J.
Giapintzakis, J.
Mihailescu, C.N.
Orfanidou, C.M.
Svoukis, E.
Breza, A.
Lioutas, C.B.
Franger, S.
Revcolevschi, A.
Maroutian, T.
Lecoeur, P.
Aubert, P.
Agnus, G.
Salot, R.
Albouy, P.A.
Weil, R.
Alamarguy, D.
March, K.
Jomard, F.
Chrétien, P.
Schneegans, O.
spellingShingle Mai, V.H.
Moradpour, A.
Senzier, P.A.
Pasquier, C.
Wang, K.
Rozenberg, M.J.
Giapintzakis, J.
Mihailescu, C.N.
Orfanidou, C.M.
Svoukis, E.
Breza, A.
Lioutas, C.B.
Franger, S.
Revcolevschi, A.
Maroutian, T.
Lecoeur, P.
Aubert, P.
Agnus, G.
Salot, R.
Albouy, P.A.
Weil, R.
Alamarguy, D.
March, K.
Jomard, F.
Chrétien, P.
Schneegans, O.
Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
author_facet Mai, V.H.
Moradpour, A.
Senzier, P.A.
Pasquier, C.
Wang, K.
Rozenberg, M.J.
Giapintzakis, J.
Mihailescu, C.N.
Orfanidou, C.M.
Svoukis, E.
Breza, A.
Lioutas, C.B.
Franger, S.
Revcolevschi, A.
Maroutian, T.
Lecoeur, P.
Aubert, P.
Agnus, G.
Salot, R.
Albouy, P.A.
Weil, R.
Alamarguy, D.
March, K.
Jomard, F.
Chrétien, P.
Schneegans, O.
author_sort Mai, V.H.
title Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
title_short Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
title_full Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
title_fullStr Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
title_full_unstemmed Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
title_sort memristive and neuromorphic behavior in a li x coo 2 nanobattery
url http://hdl.handle.net/20.500.12110/paper_20452322_v5_n_p_Mai
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