Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herei...
Autores principales: | Mai, V.H., Moradpour, A., Senzier, P.A., Pasquier, C., Wang, K., Rozenberg, M.J., Giapintzakis, J., Mihailescu, C.N., Orfanidou, C.M., Svoukis, E., Breza, A., Lioutas, C.B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P., Agnus, G., Salot, R., Albouy, P.A., Weil, R., Alamarguy, D., March, K., Jomard, F., Chrétien, P., Schneegans, O. |
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Formato: | JOUR |
Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_20452322_v5_n_p_Mai |
Aporte de: |
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