Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memr...
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American Chemical Society
2015
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| LEADER | 12665caa a22011657a 4500 | ||
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| 001 | PAPER-13194 | ||
| 003 | AR-BaUEN | ||
| 005 | 20230518204329.0 | ||
| 008 | 190411s2015 xx ||||fo|||| 00| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-84944345162 | |
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Lee, H.-S. | |
| 245 | 1 | 0 | |a Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| 260 | |b American Chemical Society |c 2015 | ||
| 270 | 1 | 0 | |m Park, H.-H.; Department of Materials Science and Engineering, Yonsei UniversitySouth Korea |
| 506 | |2 openaire |e Política editorial | ||
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| 520 | 3 | |a Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. © 2015 American Chemical Society. |l eng | |
| 593 | |a Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul, 120-749, South Korea | ||
| 593 | |a Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, Orsay, 91405, France | ||
| 593 | |a IFIBA-Conicet, Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón i, Buenos Aires, 1428, Argentina | ||
| 593 | |a School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, South Korea | ||
| 593 | |a Department of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea | ||
| 690 | 1 | 0 | |a CROSS POINT ARRAY STRUCTURE |
| 690 | 1 | 0 | |a FERROELECTRIC TUNNEL JUNCTION |
| 690 | 1 | 0 | |a MEMRISTOR |
| 690 | 1 | 0 | |a PEROVSKITE MANGANITE FAMILY |
| 690 | 1 | 0 | |a SNEAK CURRENT |
| 690 | 1 | 0 | |a BARIUM COMPOUNDS |
| 690 | 1 | 0 | |a CALCIUM |
| 690 | 1 | 0 | |a FERROELECTRICITY |
| 690 | 1 | 0 | |a FLASH MEMORY |
| 690 | 1 | 0 | |a MANGANESE OXIDE |
| 690 | 1 | 0 | |a MEMRISTORS |
| 690 | 1 | 0 | |a PASSIVE FILTERS |
| 690 | 1 | 0 | |a THERMIONIC EMISSION |
| 690 | 1 | 0 | |a CROSS-POINT ARRAY |
| 690 | 1 | 0 | |a FERROELECTRIC TUNNEL JUNCTIONS |
| 690 | 1 | 0 | |a MEMRISTOR |
| 690 | 1 | 0 | |a PEROVSKITE MANGANITES |
| 690 | 1 | 0 | |a SNEAK CURRENTS |
| 690 | 1 | 0 | |a TUNNEL JUNCTIONS |
| 700 | 1 | |a Han, W. | |
| 700 | 1 | |a Chung, H.-Y. | |
| 700 | 1 | |a Rozenberg, M. | |
| 700 | 1 | |a Kim, K. | |
| 700 | 1 | |a Lee, Z. | |
| 700 | 1 | |a Yeom, G.Y. | |
| 700 | 1 | |a Park, H.-H. | |
| 773 | 0 | |d American Chemical Society, 2015 |g v. 7 |h pp. 22348-22354 |k n. 40 |p ACS Appl. Mater. Interfaces |x 19448244 |t ACS Applied Materials and Interfaces | |
| 856 | 4 | 1 | |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-84944345162&doi=10.1021%2facsami.5b06117&partnerID=40&md5=99b4c26f3e3e7cbe8d7e8fa7fbb6b69a |y Registro en Scopus |
| 856 | 4 | 0 | |u https://doi.org/10.1021/acsami.5b06117 |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee |y Handle |
| 856 | 4 | 0 | |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19448244_v7_n40_p22348_Lee |y Registro en la Biblioteca Digital |
| 961 | |a paper_19448244_v7_n40_p22348_Lee |b paper |c PE | ||
| 962 | |a info:eu-repo/semantics/article |a info:ar-repo/semantics/artículo |b info:eu-repo/semantics/publishedVersion | ||
| 999 | |c 74147 | ||