Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiat...
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Trans Tech Publications Ltd
1997
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| LEADER | 03665caa a22005057a 4500 | ||
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| 001 | PAPER-20160 | ||
| 003 | AR-BaUEN | ||
| 005 | 20250212092136.0 | ||
| 008 | 190411s1997 xx ||||fo|||| 00| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-3042990625 | |
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| 100 | 1 | |a Aguirre, M.H. | |
| 245 | 1 | 0 | |a Radiation defects studies on Ar-lmplanted Hg1-xCdxTe |
| 260 | |b Trans Tech Publications Ltd |c 1997 | ||
| 270 | 1 | 0 | |m Aguirre, M.H.; PRINSO, CONICET-CITEFA, Zufriategui 4380, Villa Martelli 1603, Pcia de Buenos Aires, Argentina |
| 504 | |a Irvine, S., Mullin, J., (1981) J. Crystal Growth, 55, p. 107 | ||
| 504 | |a Destéfanis, G.L., (1988) J. Crystal Growth, 86, p. 700 | ||
| 504 | |a Willardson, R., Beer, A., (1981) W.F.H. Micklethwaite in Semiconductors and Semimetals, 18. , Academic Press, Chapter 3 | ||
| 504 | |a Gilabert, U., Serravalle, O., Heredia, E., Cánepa, H., Trigubó, A., De Walsöe Reca, N.E., (1995) Anales de la Asociación Quimica Argentina, 83, p. 65 | ||
| 504 | |a Chu, W., Mayer, J., Nicolet, M., (1978) Backscattering Spectrometry, , Academic Press, Inc Chapters | ||
| 504 | |a Quéré, Y., (1974) J. Nucl Mater, 53 (262) | ||
| 504 | |a (1976) Radiat Eff, 28, p. 253 | ||
| 504 | |a Picraux, S., Rimini, E., Foti, G., Campisano, S., (1978) Phys Rev., B, 18, p. 2078 | ||
| 504 | |a Ziegler, J.F., (1992) Handbook of Ion Implantation Technology, , Elsevier Science Publishers B. V. North-Holland | ||
| 504 | |a Feldman, L., Rodgers, J., (1970) J Appl Phys, 41, p. 3776 | ||
| 504 | |a Feldman, L., Mayer, J., Picraux, S., (1982) Materials Analysis by Ion Channeling, , Academic Press, NY, Chapter 4 | ||
| 504 | |a Quéré, Y., (1968) Phys Status Solidi, 30, p. 713 | ||
| 504 | |a Mory, J., Quéré, Y., (1972) Radiat Eff., 13, p. 57 | ||
| 506 | |2 openaire |e Política editorial | ||
| 520 | 3 | |a Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiation of MCT with different concentrations (x = 0.1 and 0.2 ) and different crystallines orientations: (111), (110) and (100). Results are discussed pointing out that stacking faults are probable near projected range (Rp) depth while interstitials seem to be more probable at deeper distances than Rp. |l eng | |
| 593 | |a PRINSO, CONICET-CITEFA, Zufriategui 4380, Villa Martelli 1603, Pcia de Buenos Aires, Argentina | ||
| 593 | |a Dpto. de Fisica, Facultad de Ciencias Exactas, Universidad de Buenos Aires, Buenos Aires, Argentina | ||
| 690 | 1 | 0 | |a INFRARED DETECTORS |
| 690 | 1 | 0 | |a ION IMPLANTATION |
| 690 | 1 | 0 | |a RADIATION DEFECTS |
| 690 | 1 | 0 | |a RUTHERFORD BACKSCATTERING SPECTROSCOPY AND CHANNELING |
| 700 | 1 | |a Cánepa, Horacio Ricardo | |
| 700 | 1 | |a De Walsöe Reca, N.E. | |
| 773 | 0 | |d Trans Tech Publications Ltd, 1997 |g v. 152 |h pp. 33-40 |p Defect Diffus. Forum |x 10120386 |t Defect and Diffusion Forum | |
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| 961 | |a paper_10120386_v152_n_p33_Aguirre |b paper |c PE | ||
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