Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acousti...
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2008
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00381098_v148_n5-6_p255_Alcalde http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde |
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paper:paper_00381098_v148_n5-6_p255_Alcalde2025-07-30T17:43:35Z Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction A. Nanostructures A. Semiconductors D. Electron-phonon interactions Computer networks Crystals Deformation Electric conductivity Flow interactions Gallium alloys Indium arsenide Inverse kinematics Modulation Optical waveguides Orbits Piezoelectricity Quantum electronics Semiconductor materials Semiconductor quantum dots A. Nanostructures A. Semiconductors D. Electron-phonon interactions Spin-relaxation rates Spin dynamics We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Landé g-factor, which depend strongly on the spatial shape of the confinement. © 2008 Elsevier Ltd. All rights reserved. 2008 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00381098_v148_n5-6_p255_Alcalde http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
A. Nanostructures A. Semiconductors D. Electron-phonon interactions Computer networks Crystals Deformation Electric conductivity Flow interactions Gallium alloys Indium arsenide Inverse kinematics Modulation Optical waveguides Orbits Piezoelectricity Quantum electronics Semiconductor materials Semiconductor quantum dots A. Nanostructures A. Semiconductors D. Electron-phonon interactions Spin-relaxation rates Spin dynamics |
| spellingShingle |
A. Nanostructures A. Semiconductors D. Electron-phonon interactions Computer networks Crystals Deformation Electric conductivity Flow interactions Gallium alloys Indium arsenide Inverse kinematics Modulation Optical waveguides Orbits Piezoelectricity Quantum electronics Semiconductor materials Semiconductor quantum dots A. Nanostructures A. Semiconductors D. Electron-phonon interactions Spin-relaxation rates Spin dynamics Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| topic_facet |
A. Nanostructures A. Semiconductors D. Electron-phonon interactions Computer networks Crystals Deformation Electric conductivity Flow interactions Gallium alloys Indium arsenide Inverse kinematics Modulation Optical waveguides Orbits Piezoelectricity Quantum electronics Semiconductor materials Semiconductor quantum dots A. Nanostructures A. Semiconductors D. Electron-phonon interactions Spin-relaxation rates Spin dynamics |
| description |
We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Landé g-factor, which depend strongly on the spatial shape of the confinement. © 2008 Elsevier Ltd. All rights reserved. |
| title |
Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| title_short |
Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| title_full |
Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| title_fullStr |
Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| title_full_unstemmed |
Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| title_sort |
spin relaxation rates in quantum dots: role of the phonon modulated spin-orbit interaction |
| publishDate |
2008 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00381098_v148_n5-6_p255_Alcalde http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde |
| _version_ |
1840326254115422208 |