Below-bandgap excitation of bulk semiconductors by twisted light

I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the momentum of light. I predict that the optical excitation produces a superpos...

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Autor principal: Quinteiro, Guillermo
Publicado: 2010
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02955075_v91_n2_p_Quinteiro
http://hdl.handle.net/20.500.12110/paper_02955075_v91_n2_p_Quinteiro
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spelling paper:paper_02955075_v91_n2_p_Quinteiro2023-06-08T15:27:12Z Below-bandgap excitation of bulk semiconductors by twisted light Quinteiro, Guillermo I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the momentum of light. I predict that the optical excitation produces a superposition of exciton-like states that undergo a complex center-of-mass motion. In addition, I show that the energy at which the absorption occurs is slightly different from that of pure excitons, due to the center-of-mass kinetic energy of the new states. Finally, I provide expressions for the induced polarization and electric current, which exhibit complex spatial patterns that mimic the twisted-light electric field. Copyright © 2010 EPLA. Fil:Quinteiro, G.F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02955075_v91_n2_p_Quinteiro http://hdl.handle.net/20.500.12110/paper_02955075_v91_n2_p_Quinteiro
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the momentum of light. I predict that the optical excitation produces a superposition of exciton-like states that undergo a complex center-of-mass motion. In addition, I show that the energy at which the absorption occurs is slightly different from that of pure excitons, due to the center-of-mass kinetic energy of the new states. Finally, I provide expressions for the induced polarization and electric current, which exhibit complex spatial patterns that mimic the twisted-light electric field. Copyright © 2010 EPLA.
author Quinteiro, Guillermo
spellingShingle Quinteiro, Guillermo
Below-bandgap excitation of bulk semiconductors by twisted light
author_facet Quinteiro, Guillermo
author_sort Quinteiro, Guillermo
title Below-bandgap excitation of bulk semiconductors by twisted light
title_short Below-bandgap excitation of bulk semiconductors by twisted light
title_full Below-bandgap excitation of bulk semiconductors by twisted light
title_fullStr Below-bandgap excitation of bulk semiconductors by twisted light
title_full_unstemmed Below-bandgap excitation of bulk semiconductors by twisted light
title_sort below-bandgap excitation of bulk semiconductors by twisted light
publishDate 2010
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02955075_v91_n2_p_Quinteiro
http://hdl.handle.net/20.500.12110/paper_02955075_v91_n2_p_Quinteiro
work_keys_str_mv AT quinteiroguillermo belowbandgapexcitationofbulksemiconductorsbytwistedlight
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