Below-bandgap excitation of bulk semiconductors by twisted light
I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the momentum of light. I predict that the optical excitation produces a superpos...
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2010
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02955075_v91_n2_p_Quinteiro http://hdl.handle.net/20.500.12110/paper_02955075_v91_n2_p_Quinteiro |
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| Sumario: | I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the momentum of light. I predict that the optical excitation produces a superposition of exciton-like states that undergo a complex center-of-mass motion. In addition, I show that the energy at which the absorption occurs is slightly different from that of pure excitons, due to the center-of-mass kinetic energy of the new states. Finally, I provide expressions for the induced polarization and electric current, which exhibit complex spatial patterns that mimic the twisted-light electric field. Copyright © 2010 EPLA. |
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