Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sp...

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Publicado: 2012
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Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3147_Schulman
http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3147_Schulman
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spelling paper:paper_09214526_v407_n16_p3147_Schulman2023-06-08T15:50:36Z Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces Electromigration Granular superconductor Memory effects Resistive switching effect Ceramic samples Conducting filament Contact interface Granular superconductors Ion migration IV characteristics Key parameters Memory effects Oxide interfaces Resistive switching Resistive switching mechanisms Temperature dependence Electric properties Electromigration Gold deposits Platinum Yttrium barium copper oxides Switching systems In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model. © 2011 Elsevier B.V. All rights reserved. 2012 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3147_Schulman http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3147_Schulman
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Electromigration
Granular superconductor
Memory effects
Resistive switching effect
Ceramic samples
Conducting filament
Contact interface
Granular superconductors
Ion migration
IV characteristics
Key parameters
Memory effects
Oxide interfaces
Resistive switching
Resistive switching mechanisms
Temperature dependence
Electric properties
Electromigration
Gold deposits
Platinum
Yttrium barium copper oxides
Switching systems
spellingShingle Electromigration
Granular superconductor
Memory effects
Resistive switching effect
Ceramic samples
Conducting filament
Contact interface
Granular superconductors
Ion migration
IV characteristics
Key parameters
Memory effects
Oxide interfaces
Resistive switching
Resistive switching mechanisms
Temperature dependence
Electric properties
Electromigration
Gold deposits
Platinum
Yttrium barium copper oxides
Switching systems
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
topic_facet Electromigration
Granular superconductor
Memory effects
Resistive switching effect
Ceramic samples
Conducting filament
Contact interface
Granular superconductors
Ion migration
IV characteristics
Key parameters
Memory effects
Oxide interfaces
Resistive switching
Resistive switching mechanisms
Temperature dependence
Electric properties
Electromigration
Gold deposits
Platinum
Yttrium barium copper oxides
Switching systems
description In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model. © 2011 Elsevier B.V. All rights reserved.
title Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
title_short Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
title_full Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
title_fullStr Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
title_full_unstemmed Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
title_sort resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
publishDate 2012
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3147_Schulman
http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3147_Schulman
_version_ 1768542946827698176