Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sp...
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2012
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Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3147_Schulman http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3147_Schulman |
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paper:paper_09214526_v407_n16_p3147_Schulman2023-06-08T15:50:36Z Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces Electromigration Granular superconductor Memory effects Resistive switching effect Ceramic samples Conducting filament Contact interface Granular superconductors Ion migration IV characteristics Key parameters Memory effects Oxide interfaces Resistive switching Resistive switching mechanisms Temperature dependence Electric properties Electromigration Gold deposits Platinum Yttrium barium copper oxides Switching systems In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model. © 2011 Elsevier B.V. All rights reserved. 2012 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3147_Schulman http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3147_Schulman |
institution |
Universidad de Buenos Aires |
institution_str |
I-28 |
repository_str |
R-134 |
collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
topic |
Electromigration Granular superconductor Memory effects Resistive switching effect Ceramic samples Conducting filament Contact interface Granular superconductors Ion migration IV characteristics Key parameters Memory effects Oxide interfaces Resistive switching Resistive switching mechanisms Temperature dependence Electric properties Electromigration Gold deposits Platinum Yttrium barium copper oxides Switching systems |
spellingShingle |
Electromigration Granular superconductor Memory effects Resistive switching effect Ceramic samples Conducting filament Contact interface Granular superconductors Ion migration IV characteristics Key parameters Memory effects Oxide interfaces Resistive switching Resistive switching mechanisms Temperature dependence Electric properties Electromigration Gold deposits Platinum Yttrium barium copper oxides Switching systems Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
topic_facet |
Electromigration Granular superconductor Memory effects Resistive switching effect Ceramic samples Conducting filament Contact interface Granular superconductors Ion migration IV characteristics Key parameters Memory effects Oxide interfaces Resistive switching Resistive switching mechanisms Temperature dependence Electric properties Electromigration Gold deposits Platinum Yttrium barium copper oxides Switching systems |
description |
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model. © 2011 Elsevier B.V. All rights reserved. |
title |
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
title_short |
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
title_full |
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
title_fullStr |
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
title_full_unstemmed |
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
title_sort |
resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces |
publishDate |
2012 |
url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3147_Schulman http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3147_Schulman |
_version_ |
1768542946827698176 |