Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular,...

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Autores principales: Camjayi, Alberto, Rozenberg, Marcelo Javier
Publicado: 2006
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v73_n4_p_Camjayi
http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling paper:paper_10980121_v73_n4_p_Camjayi2023-06-08T16:07:33Z Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory Camjayi, Alberto Rozenberg, Marcelo Javier We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a "bad metal" state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the charge compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line. © 2006 The American Physical Society. Fil:Camjayi, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2006 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v73_n4_p_Camjayi http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a "bad metal" state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the charge compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line. © 2006 The American Physical Society.
author Camjayi, Alberto
Rozenberg, Marcelo Javier
spellingShingle Camjayi, Alberto
Rozenberg, Marcelo Javier
Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
author_facet Camjayi, Alberto
Rozenberg, Marcelo Javier
author_sort Camjayi, Alberto
title Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_short Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_full Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_fullStr Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_full_unstemmed Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_sort electronic state of a doped mott-hubbard insulator at finite temperatures studied using the dynamical mean-field theory
publishDate 2006
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v73_n4_p_Camjayi
http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
work_keys_str_mv AT camjayialberto electronicstateofadopedmotthubbardinsulatoratfinitetemperaturesstudiedusingthedynamicalmeanfieldtheory
AT rozenbergmarcelojavier electronicstateofadopedmotthubbardinsulatoratfinitetemperaturesstudiedusingthedynamicalmeanfieldtheory
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