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spelling paper:paper_15393755_v87_n1_p_Patterson2023-06-08T16:20:56Z Numerical and experimental study of stochastic resistive switching Grosz, Diego Fernando Contrast ratio Driving signal Electronic integration High-resistance state Large amplitude Numerical and experimental study Resistive switching Simulations and measurements Small amplitude Computer simulation Experiments Gaussian noise (electronic) Manganese oxide Switching systems algorithm article computer simulation impedance signal processing statistical model statistics Algorithms Computer Simulation Electric Impedance Models, Statistical Signal Processing, Computer-Assisted Stochastic Processes In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable. © 2013 American Physical Society. Fil:Grosz, D.F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2013 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15393755_v87_n1_p_Patterson http://hdl.handle.net/20.500.12110/paper_15393755_v87_n1_p_Patterson
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Contrast ratio
Driving signal
Electronic integration
High-resistance state
Large amplitude
Numerical and experimental study
Resistive switching
Simulations and measurements
Small amplitude
Computer simulation
Experiments
Gaussian noise (electronic)
Manganese oxide
Switching systems
algorithm
article
computer simulation
impedance
signal processing
statistical model
statistics
Algorithms
Computer Simulation
Electric Impedance
Models, Statistical
Signal Processing, Computer-Assisted
Stochastic Processes
spellingShingle Contrast ratio
Driving signal
Electronic integration
High-resistance state
Large amplitude
Numerical and experimental study
Resistive switching
Simulations and measurements
Small amplitude
Computer simulation
Experiments
Gaussian noise (electronic)
Manganese oxide
Switching systems
algorithm
article
computer simulation
impedance
signal processing
statistical model
statistics
Algorithms
Computer Simulation
Electric Impedance
Models, Statistical
Signal Processing, Computer-Assisted
Stochastic Processes
Grosz, Diego Fernando
Numerical and experimental study of stochastic resistive switching
topic_facet Contrast ratio
Driving signal
Electronic integration
High-resistance state
Large amplitude
Numerical and experimental study
Resistive switching
Simulations and measurements
Small amplitude
Computer simulation
Experiments
Gaussian noise (electronic)
Manganese oxide
Switching systems
algorithm
article
computer simulation
impedance
signal processing
statistical model
statistics
Algorithms
Computer Simulation
Electric Impedance
Models, Statistical
Signal Processing, Computer-Assisted
Stochastic Processes
description In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable. © 2013 American Physical Society.
author Grosz, Diego Fernando
author_facet Grosz, Diego Fernando
author_sort Grosz, Diego Fernando
title Numerical and experimental study of stochastic resistive switching
title_short Numerical and experimental study of stochastic resistive switching
title_full Numerical and experimental study of stochastic resistive switching
title_fullStr Numerical and experimental study of stochastic resistive switching
title_full_unstemmed Numerical and experimental study of stochastic resistive switching
title_sort numerical and experimental study of stochastic resistive switching
publishDate 2013
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15393755_v87_n1_p_Patterson
http://hdl.handle.net/20.500.12110/paper_15393755_v87_n1_p_Patterson
work_keys_str_mv AT groszdiegofernando numericalandexperimentalstudyofstochasticresistiveswitching
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