Hysteresis switching loops in Ag-manganite memristive interfaces

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Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops...

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Autores principales:	Ghenzi, N., Sánchez, M.J., Gomez-Marlasca, F., Levy, P., Rozenberg, M.J.
Formato:	Artículo publishedVersion
Lenguaje:	Inglés
Publicado:	2010
Materias:	Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paperaa:paper_00218979_v107_n9_p_Ghenzi
record_format	dspace
spelling	paperaa:paper_00218979_v107_n9_p_Ghenzi2023-06-12T16:42:33Z Hysteresis switching loops in Ag-manganite memristive interfaces J Appl Phys 2010;107(9) Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J. Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2010 info:eu-repo/semantics/article info:ar-repo/semantics/artículo info:eu-repo/semantics/publishedVersion application/pdf eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
language	Inglés
orig_language_str_mv	eng
topic	Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching
spellingShingle	Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J. Hysteresis switching loops in Ag-manganite memristive interfaces
topic_facet	Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching
description	Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.
format	Artículo Artículo publishedVersion
author	Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J.
author_facet	Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J.
author_sort	Ghenzi, N.
title	Hysteresis switching loops in Ag-manganite memristive interfaces
title_short	Hysteresis switching loops in Ag-manganite memristive interfaces
title_full	Hysteresis switching loops in Ag-manganite memristive interfaces
title_fullStr	Hysteresis switching loops in Ag-manganite memristive interfaces
title_full_unstemmed	Hysteresis switching loops in Ag-manganite memristive interfaces
title_sort	hysteresis switching loops in ag-manganite memristive interfaces
publishDate	2010
url	http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
work_keys_str_mv	AT ghenzin hysteresisswitchingloopsinagmanganitememristiveinterfaces AT sanchezmj hysteresisswitchingloopsinagmanganitememristiveinterfaces AT gomezmarlascaf hysteresisswitchingloopsinagmanganitememristiveinterfaces AT levyp hysteresisswitchingloopsinagmanganitememristiveinterfaces AT rozenbergmj hysteresisswitchingloopsinagmanganitememristiveinterfaces
_version_	1769810315457855488

Hysteresis switching loops in Ag-manganite memristive interfaces

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