Nitrogen incorporation during PVD deposition of TiO2:N thin films

TiO2:N is known for its photoactivity upon illumination with visible light. Using filtered arc with energetic particle fluxes, deposition near room temperature on sensitive substrates, e.g. polymers should be possible. However, addition of nitrogen gas flux during deposition results in very small ni...

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Autores principales: Manova, D., Arias, L.F., Hofele, A., Alani, I., Kleiman, A., Asenova, I., Decker, U., Marquez, A., Mändl, S.
Formato: JOUR
Materias:
Band gap engineering
PVD
Tauc plot
TiO2
Energy gap
Ion implantation
Nitrogen
Physical vapor deposition
Secondary ion mass spectrometry
Titanium dioxide
Cathodic arc deposition
Energetic particle flux
Nitrogen incorporation
Plasma based ion implantation and deposition
Secondary ion mass spectroscopies (SIMS)
Tauc plots
Nitrogen plasma
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_02578972_v312_n_p61_Manova
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_02578972_v312_n_p61_Manova
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spelling todo:paper_02578972_v312_n_p61_Manova2023-10-03T15:11:41Z Nitrogen incorporation during PVD deposition of TiO2:N thin films Manova, D. Arias, L.F. Hofele, A. Alani, I. Kleiman, A. Asenova, I. Decker, U. Marquez, A. Mändl, S. Band gap engineering PVD Tauc plot TiO2 Energy gap Ion implantation Nitrogen Physical vapor deposition Secondary ion mass spectrometry Titanium dioxide Band gap engineering Cathodic arc deposition Energetic particle flux Nitrogen incorporation Plasma based ion implantation and deposition Secondary ion mass spectroscopies (SIMS) Tauc plots TiO2 Nitrogen plasma TiO2:N is known for its photoactivity upon illumination with visible light. Using filtered arc with energetic particle fluxes, deposition near room temperature on sensitive substrates, e.g. polymers should be possible. However, addition of nitrogen gas flux during deposition results in very small nitrogen contents. Incorporation of nitrogen up to 5–7.5 at.% for either cathodic arc deposition or plasma based ion implantation and deposition leads to a reduction of the band gap down to 2.7 eV before the films become semimetallic. However, only deposition at a temperature of 200 °C allows avoiding the early formation of defects within the band gap. The nitrogen content was determined using secondary ion mass spectroscopy (SIMS) and calibrated with nitrogen implanted TiO2 samples using conventional beamline implantation. The results show that the nitrogen/oxygen flow ratio in two completely different deposition systems is a reliable indicator of the physical properties. © 2016 Elsevier B.V. Fil:Kleiman, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Marquez, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_02578972_v312_n_p61_Manova
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Band gap engineering
PVD
Tauc plot
TiO2
Energy gap
Ion implantation
Nitrogen
Physical vapor deposition
Secondary ion mass spectrometry
Titanium dioxide
Band gap engineering
Cathodic arc deposition
Energetic particle flux
Nitrogen incorporation
Plasma based ion implantation and deposition
Secondary ion mass spectroscopies (SIMS)
Tauc plots
TiO2
Nitrogen plasma
spellingShingle Band gap engineering
PVD
Tauc plot
TiO2
Energy gap
Ion implantation
Nitrogen
Physical vapor deposition
Secondary ion mass spectrometry
Titanium dioxide
Band gap engineering
Cathodic arc deposition
Energetic particle flux
Nitrogen incorporation
Plasma based ion implantation and deposition
Secondary ion mass spectroscopies (SIMS)
Tauc plots
TiO2
Nitrogen plasma
Manova, D.
Arias, L.F.
Hofele, A.
Alani, I.
Kleiman, A.
Asenova, I.
Decker, U.
Marquez, A.
Mändl, S.
Nitrogen incorporation during PVD deposition of TiO2:N thin films
topic_facet Band gap engineering
PVD
Tauc plot
TiO2
Energy gap
Ion implantation
Nitrogen
Physical vapor deposition
Secondary ion mass spectrometry
Titanium dioxide
Band gap engineering
Cathodic arc deposition
Energetic particle flux
Nitrogen incorporation
Plasma based ion implantation and deposition
Secondary ion mass spectroscopies (SIMS)
Tauc plots
TiO2
Nitrogen plasma
description TiO2:N is known for its photoactivity upon illumination with visible light. Using filtered arc with energetic particle fluxes, deposition near room temperature on sensitive substrates, e.g. polymers should be possible. However, addition of nitrogen gas flux during deposition results in very small nitrogen contents. Incorporation of nitrogen up to 5–7.5 at.% for either cathodic arc deposition or plasma based ion implantation and deposition leads to a reduction of the band gap down to 2.7 eV before the films become semimetallic. However, only deposition at a temperature of 200 °C allows avoiding the early formation of defects within the band gap. The nitrogen content was determined using secondary ion mass spectroscopy (SIMS) and calibrated with nitrogen implanted TiO2 samples using conventional beamline implantation. The results show that the nitrogen/oxygen flow ratio in two completely different deposition systems is a reliable indicator of the physical properties. © 2016 Elsevier B.V.
format JOUR
author Manova, D.
Arias, L.F.
Hofele, A.
Alani, I.
Kleiman, A.
Asenova, I.
Decker, U.
Marquez, A.
Mändl, S.
author_facet Manova, D.
Arias, L.F.
Hofele, A.
Alani, I.
Kleiman, A.
Asenova, I.
Decker, U.
Marquez, A.
Mändl, S.
author_sort Manova, D.
title Nitrogen incorporation during PVD deposition of TiO2:N thin films
title_short Nitrogen incorporation during PVD deposition of TiO2:N thin films
title_full Nitrogen incorporation during PVD deposition of TiO2:N thin films
title_fullStr Nitrogen incorporation during PVD deposition of TiO2:N thin films
title_full_unstemmed Nitrogen incorporation during PVD deposition of TiO2:N thin films
title_sort nitrogen incorporation during pvd deposition of tio2:n thin films
url http://hdl.handle.net/20.500.12110/paper_02578972_v312_n_p61_Manova
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