Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT s...
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3252_Intronati |
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todo:paper_09214526_v407_n16_p3252_Intronati2023-10-03T15:45:29Z Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors Intronati, G.A. Tamborenea, P.I. Weinmann, D. Jalabert, R.A. Impurity band Metal-insulator transition Semiconductors Spin relaxation Density of state Eigenstates Energy eigenstates Finite size Impurity bands N-doped semiconductor Participation ratios Perturbed state Spin orbit interactions Spin orbits Spin relaxation Spin-orbit couplings Semiconductor insulator boundaries Semiconductor materials Semiconductor doping We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter. © 2012 Elsevier B.V. Fil:Intronati, G.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Tamborenea, P.I. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3252_Intronati |
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Universidad de Buenos Aires |
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I-28 |
| repository_str |
R-134 |
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Impurity band Metal-insulator transition Semiconductors Spin relaxation Density of state Eigenstates Energy eigenstates Finite size Impurity bands N-doped semiconductor Participation ratios Perturbed state Spin orbit interactions Spin orbits Spin relaxation Spin-orbit couplings Semiconductor insulator boundaries Semiconductor materials Semiconductor doping |
| spellingShingle |
Impurity band Metal-insulator transition Semiconductors Spin relaxation Density of state Eigenstates Energy eigenstates Finite size Impurity bands N-doped semiconductor Participation ratios Perturbed state Spin orbit interactions Spin orbits Spin relaxation Spin-orbit couplings Semiconductor insulator boundaries Semiconductor materials Semiconductor doping Intronati, G.A. Tamborenea, P.I. Weinmann, D. Jalabert, R.A. Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| topic_facet |
Impurity band Metal-insulator transition Semiconductors Spin relaxation Density of state Eigenstates Energy eigenstates Finite size Impurity bands N-doped semiconductor Participation ratios Perturbed state Spin orbit interactions Spin orbits Spin relaxation Spin-orbit couplings Semiconductor insulator boundaries Semiconductor materials Semiconductor doping |
| description |
We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter. © 2012 Elsevier B.V. |
| format |
JOUR |
| author |
Intronati, G.A. Tamborenea, P.I. Weinmann, D. Jalabert, R.A. |
| author_facet |
Intronati, G.A. Tamborenea, P.I. Weinmann, D. Jalabert, R.A. |
| author_sort |
Intronati, G.A. |
| title |
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| title_short |
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| title_full |
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| title_fullStr |
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| title_full_unstemmed |
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| title_sort |
influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| url |
http://hdl.handle.net/20.500.12110/paper_09214526_v407_n16_p3252_Intronati |
| work_keys_str_mv |
AT intronatiga influenceofthespinorbitinteractionintheimpuritybandstatesofndopedsemiconductors AT tamboreneapi influenceofthespinorbitinteractionintheimpuritybandstatesofndopedsemiconductors AT weinmannd influenceofthespinorbitinteractionintheimpuritybandstatesofndopedsemiconductors AT jalabertra influenceofthespinorbitinteractionintheimpuritybandstatesofndopedsemiconductors |
| _version_ |
1807316427515887616 |