Nonequilibrium electronic transport in a one-dimensional Mott insulator

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We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads....

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Autores principales: Heidrich-Meisner, F., González, I., Al-Hassanieh, K.A., Feiguin, A.E., Rozenberg, M.J., Dagotto, E.
Formato: JOUR
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_10980121_v82_n20_p_HeidrichMeisner
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_10980121_v82_n20_p_HeidrichMeisner
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spelling todo:paper_10980121_v82_n20_p_HeidrichMeisner2023-10-03T16:06:17Z Nonequilibrium electronic transport in a one-dimensional Mott insulator Heidrich-Meisner, F. González, I. Al-Hassanieh, K.A. Feiguin, A.E. Rozenberg, M.J. Dagotto, E. We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy. © 2010 The American Physical Society. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v82_n20_p_HeidrichMeisner
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy. © 2010 The American Physical Society.
format JOUR
author Heidrich-Meisner, F.
González, I.
Al-Hassanieh, K.A.
Feiguin, A.E.
Rozenberg, M.J.
Dagotto, E.
spellingShingle Heidrich-Meisner, F.
González, I.
Al-Hassanieh, K.A.
Feiguin, A.E.
Rozenberg, M.J.
Dagotto, E.
Nonequilibrium electronic transport in a one-dimensional Mott insulator
author_facet Heidrich-Meisner, F.
González, I.
Al-Hassanieh, K.A.
Feiguin, A.E.
Rozenberg, M.J.
Dagotto, E.
author_sort Heidrich-Meisner, F.
title Nonequilibrium electronic transport in a one-dimensional Mott insulator
title_short Nonequilibrium electronic transport in a one-dimensional Mott insulator
title_full Nonequilibrium electronic transport in a one-dimensional Mott insulator
title_fullStr Nonequilibrium electronic transport in a one-dimensional Mott insulator
title_full_unstemmed Nonequilibrium electronic transport in a one-dimensional Mott insulator
title_sort nonequilibrium electronic transport in a one-dimensional mott insulator
url http://hdl.handle.net/20.500.12110/paper_10980121_v82_n20_p_HeidrichMeisner
work_keys_str_mv AT heidrichmeisnerf nonequilibriumelectronictransportinaonedimensionalmottinsulator
AT gonzalezi nonequilibriumelectronictransportinaonedimensionalmottinsulator
AT alhassaniehka nonequilibriumelectronictransportinaonedimensionalmottinsulator
AT feiguinae nonequilibriumelectronictransportinaonedimensionalmottinsulator
AT rozenbergmj nonequilibriumelectronictransportinaonedimensionalmottinsulator
AT dagottoe nonequilibriumelectronictransportinaonedimensionalmottinsulator
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