Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memr...

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Autores principales: Lee, H.-S., Han, W., Chung, H.-Y., Rozenberg, M., Kim, K., Lee, Z., Yeom, G.Y., Park, H.-H.
Formato: JOUR
Materias:
cross point array structure
ferroelectric tunnel junction
memristor
perovskite manganite family
sneak current
Barium compounds
Calcium
Ferroelectricity
Flash memory
Manganese oxide
Memristors
Passive filters
Thermionic emission
Cross-point array
Ferroelectric tunnel junctions
Memristor
Perovskite manganites
Sneak currents
Tunnel junctions
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_19448244_v7_n40_p22348_Lee
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spelling todo:paper_19448244_v7_n40_p22348_Lee2023-10-03T16:37:02Z Ferroelectric Tunnel Junction for Dense Cross-Point Arrays Lee, H.-S. Han, W. Chung, H.-Y. Rozenberg, M. Kim, K. Lee, Z. Yeom, G.Y. Park, H.-H. cross point array structure ferroelectric tunnel junction memristor perovskite manganite family sneak current Barium compounds Calcium Ferroelectricity Flash memory Manganese oxide Memristors Passive filters Thermionic emission Cross-point array Ferroelectric tunnel junctions Memristor Perovskite manganites Sneak currents Tunnel junctions Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. © 2015 American Chemical Society. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic cross point array structure
ferroelectric tunnel junction
memristor
perovskite manganite family
sneak current
Barium compounds
Calcium
Ferroelectricity
Flash memory
Manganese oxide
Memristors
Passive filters
Thermionic emission
Cross-point array
Ferroelectric tunnel junctions
Memristor
Perovskite manganites
Sneak currents
Tunnel junctions
spellingShingle cross point array structure
ferroelectric tunnel junction
memristor
perovskite manganite family
sneak current
Barium compounds
Calcium
Ferroelectricity
Flash memory
Manganese oxide
Memristors
Passive filters
Thermionic emission
Cross-point array
Ferroelectric tunnel junctions
Memristor
Perovskite manganites
Sneak currents
Tunnel junctions
Lee, H.-S.
Han, W.
Chung, H.-Y.
Rozenberg, M.
Kim, K.
Lee, Z.
Yeom, G.Y.
Park, H.-H.
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
topic_facet cross point array structure
ferroelectric tunnel junction
memristor
perovskite manganite family
sneak current
Barium compounds
Calcium
Ferroelectricity
Flash memory
Manganese oxide
Memristors
Passive filters
Thermionic emission
Cross-point array
Ferroelectric tunnel junctions
Memristor
Perovskite manganites
Sneak currents
Tunnel junctions
description Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. © 2015 American Chemical Society.
format JOUR
author Lee, H.-S.
Han, W.
Chung, H.-Y.
Rozenberg, M.
Kim, K.
Lee, Z.
Yeom, G.Y.
Park, H.-H.
author_facet Lee, H.-S.
Han, W.
Chung, H.-Y.
Rozenberg, M.
Kim, K.
Lee, Z.
Yeom, G.Y.
Park, H.-H.
author_sort Lee, H.-S.
title Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
title_short Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
title_full Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
title_fullStr Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
title_full_unstemmed Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
title_sort ferroelectric tunnel junction for dense cross-point arrays
url http://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee
work_keys_str_mv AT leehs ferroelectrictunneljunctionfordensecrosspointarrays
AT hanw ferroelectrictunneljunctionfordensecrosspointarrays
AT chunghy ferroelectrictunneljunctionfordensecrosspointarrays
AT rozenbergm ferroelectrictunneljunctionfordensecrosspointarrays
AT kimk ferroelectrictunneljunctionfordensecrosspointarrays
AT leez ferroelectrictunneljunctionfordensecrosspointarrays
AT yeomgy ferroelectrictunneljunctionfordensecrosspointarrays
AT parkhh ferroelectrictunneljunctionfordensecrosspointarrays
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