Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memr...

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Detalles Bibliográficos
Autores principales: Lee, H.-S., Han, W., Chung, H.-Y., Rozenberg, M., Kim, K., Lee, Z., Yeom, G.Y., Park, H.-H.
Formato: JOUR
Materias:
cross point array structure
ferroelectric tunnel junction
memristor
perovskite manganite family
sneak current
Barium compounds
Calcium
Ferroelectricity
Flash memory
Manganese oxide
Memristors
Passive filters
Thermionic emission
Cross-point array
Ferroelectric tunnel junctions
Memristor
Perovskite manganites
Sneak currents
Tunnel junctions
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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